Self-catalyzed VLS grown InAs nanowires with twinning superlattices
Identifieur interne : 000560 ( Main/Repository ); précédent : 000559; suivant : 000561Self-catalyzed VLS grown InAs nanowires with twinning superlattices
Auteurs : RBID : Pascal:13-0283845Descripteurs français
- Pascal (Inist)
- Catalyseur, Synthèse nanomatériau, Arséniure d'indium, Semiconducteur III-V, Composé III-V, Maclage, Superréseau, Epitaxie jet moléculaire, Oxyde de silicium, Couche oxyde, Condition opératoire, Méthode VLS, Gouttelette, Taux croissance, Arsenic, Angle contact, Mécanisme croissance, Arséniure de gallium, Nanofil, Nanomatériau, Structure cristalline, Zinc, Défaut cristallin, Substrat GaAs, 8116H, 8116, 6146, 8107V.
- Wicri :
- concept : Zinc.
English descriptors
- KwdEn :
- Arsenic, Catalysts, Contact angle, Crystal defects, Crystal structure, Droplets, Gallium arsenides, Growth mechanism, Growth rate, III-V compound, III-V semiconductors, Indium arsenides, Molecular beam epitaxy, Nanomaterial synthesis, Nanostructured materials, Nanowires, Operating conditions, Oxide layer, Silicon oxides, Superlattices, Twinning, VLS growth, Zinc.
Abstract
We report on the self-catalyzed growth of InAs nanowires by molecular beam epitaxy on GaAs substrates covered by a thin silicon oxide layer. Clear evidence is presented to demonstrate that, under our experimental conditions, the growth takes place by the vapor-liquid-solid (VLS) mechanism via an In droplet. The nanowire growth rate is controlled by the arsenic pressure while the diameter depends mainly on the In rate. The contact angle of the In droplet is smaller than that of the Ga droplet involved in the growth of GaAs nanowires, resulting in much lower growth rates. The crystal structure of the VLS grown InAs nanowires is zinc blende with regularly spaced rotational twins forming a twinning superlattice.
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Rieger</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Peter Grünberg Institut (PGI-9), Forschungszentrum Jülich GmbH</s1><s2>52425 Jülich</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Allemagne</country><wicri:noRegion>52425 Jülich</wicri:noRegion><wicri:noRegion>Forschungszentrum Jülich GmbH</wicri:noRegion><wicri:noRegion>52425 Jülich</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>JARA-Fundamentals of Future Information Technology, Jülich-Aachen Research Alliance</s1><s3>DEU</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Allemagne</country><wicri:noRegion>Jülich-Aachen Research Alliance</wicri:noRegion><wicri:noRegion>JARA-Fundamentals of Future Information Technology, Jülich-Aachen Research Alliance</wicri:noRegion></affiliation></author><author><name sortKey="Blomers, Ch" uniqKey="Blomers C">Ch Blömers</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Peter Grünberg Institut (PGI-9), Forschungszentrum Jülich GmbH</s1><s2>52425 Jülich</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Allemagne</country><wicri:noRegion>52425 Jülich</wicri:noRegion><wicri:noRegion>Forschungszentrum Jülich GmbH</wicri:noRegion><wicri:noRegion>52425 Jülich</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>JARA-Fundamentals of Future Information Technology, Jülich-Aachen Research Alliance</s1><s3>DEU</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Allemagne</country><wicri:noRegion>Jülich-Aachen Research Alliance</wicri:noRegion><wicri:noRegion>JARA-Fundamentals of Future Information Technology, Jülich-Aachen Research Alliance</wicri:noRegion></affiliation></author><author><name sortKey="Sch Pers, Th" uniqKey="Sch Pers T">Th Sch Pers</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Peter Grünberg Institut (PGI-9), Forschungszentrum Jülich GmbH</s1><s2>52425 Jülich</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Allemagne</country><wicri:noRegion>52425 Jülich</wicri:noRegion><wicri:noRegion>Forschungszentrum Jülich GmbH</wicri:noRegion><wicri:noRegion>52425 Jülich</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>JARA-Fundamentals of Future Information Technology, Jülich-Aachen Research Alliance</s1><s3>DEU</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Allemagne</country><wicri:noRegion>Jülich-Aachen Research Alliance</wicri:noRegion><wicri:noRegion>JARA-Fundamentals of Future Information Technology, Jülich-Aachen Research Alliance</wicri:noRegion></affiliation><affiliation wicri:level="3"><inist:fA14 i1="03"><s1>II. Physikalisches Institut, RWTH Aachen University</s1><s2>52056 Aachen</s2><s3>DEU</s3><sZ>4 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="1">Rhénanie-du-Nord-Westphalie</region><region type="district" nuts="2">District de Cologne</region><settlement type="city">Aix-la-Chapelle</settlement></placeName></affiliation></author><author><name sortKey="Gr Tzmacher, D" uniqKey="Gr Tzmacher D">D. Gr Tzmacher</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Peter Grünberg Institut (PGI-9), Forschungszentrum Jülich GmbH</s1><s2>52425 Jülich</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Allemagne</country><wicri:noRegion>52425 Jülich</wicri:noRegion><wicri:noRegion>Forschungszentrum Jülich GmbH</wicri:noRegion><wicri:noRegion>52425 Jülich</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>JARA-Fundamentals of Future Information Technology, Jülich-Aachen Research Alliance</s1><s3>DEU</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Allemagne</country><wicri:noRegion>Jülich-Aachen Research Alliance</wicri:noRegion><wicri:noRegion>JARA-Fundamentals of Future Information Technology, Jülich-Aachen Research Alliance</wicri:noRegion></affiliation></author><author><name sortKey="Lepsa, M I" uniqKey="Lepsa M">M. I. Lepsa</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Peter Grünberg Institut (PGI-9), Forschungszentrum Jülich GmbH</s1><s2>52425 Jülich</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Allemagne</country><wicri:noRegion>52425 Jülich</wicri:noRegion><wicri:noRegion>Forschungszentrum Jülich GmbH</wicri:noRegion><wicri:noRegion>52425 Jülich</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>JARA-Fundamentals of Future Information Technology, Jülich-Aachen Research Alliance</s1><s3>DEU</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Allemagne</country><wicri:noRegion>Jülich-Aachen Research Alliance</wicri:noRegion><wicri:noRegion>JARA-Fundamentals of Future Information Technology, Jülich-Aachen Research Alliance</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">13-0283845</idno><date when="2013">2013</date><idno type="stanalyst">PASCAL 13-0283845 INIST</idno><idno type="RBID">Pascal:13-0283845</idno><idno type="wicri:Area/Main/Corpus">000878</idno><idno type="wicri:Area/Main/Repository">000560</idno></publicationStmt><seriesStmt><idno type="ISSN">0957-4484</idno><title level="j" type="abbreviated">Nanotechnology : (Bristol, Print)</title><title level="j" type="main">Nanotechnology : (Bristol. Print)</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Arsenic</term><term>Catalysts</term><term>Contact angle</term><term>Crystal defects</term><term>Crystal structure</term><term>Droplets</term><term>Gallium arsenides</term><term>Growth mechanism</term><term>Growth rate</term><term>III-V compound</term><term>III-V semiconductors</term><term>Indium arsenides</term><term>Molecular beam epitaxy</term><term>Nanomaterial synthesis</term><term>Nanostructured materials</term><term>Nanowires</term><term>Operating conditions</term><term>Oxide layer</term><term>Silicon oxides</term><term>Superlattices</term><term>Twinning</term><term>VLS growth</term><term>Zinc</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Catalyseur</term><term>Synthèse nanomatériau</term><term>Arséniure d'indium</term><term>Semiconducteur III-V</term><term>Composé III-V</term><term>Maclage</term><term>Superréseau</term><term>Epitaxie jet moléculaire</term><term>Oxyde de silicium</term><term>Couche oxyde</term><term>Condition opératoire</term><term>Méthode VLS</term><term>Gouttelette</term><term>Taux croissance</term><term>Arsenic</term><term>Angle contact</term><term>Mécanisme croissance</term><term>Arséniure de gallium</term><term>Nanofil</term><term>Nanomatériau</term><term>Structure cristalline</term><term>Zinc</term><term>Défaut cristallin</term><term>Substrat GaAs</term><term>8116H</term><term>8116</term><term>6146</term><term>8107V</term></keywords><keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Zinc</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">We report on the self-catalyzed growth of InAs nanowires by molecular beam epitaxy on GaAs substrates covered by a thin silicon oxide layer. Clear evidence is presented to demonstrate that, under our experimental conditions, the growth takes place by the vapor-liquid-solid (VLS) mechanism via an In droplet. The nanowire growth rate is controlled by the arsenic pressure while the diameter depends mainly on the In rate. The contact angle of the In droplet is smaller than that of the Ga droplet involved in the growth of GaAs nanowires, resulting in much lower growth rates. The crystal structure of the VLS grown InAs nanowires is zinc blende with regularly spaced rotational twins forming a twinning superlattice.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0957-4484</s0></fA01><fA03 i2="1"><s0>Nanotechnology : (Bristol, Print)</s0></fA03><fA05><s2>24</s2></fA05><fA06><s2>33</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Self-catalyzed VLS grown InAs nanowires with twinning superlattices</s1></fA08><fA11 i1="01" i2="1"><s1>GRAP (Th)</s1></fA11><fA11 i1="02" i2="1"><s1>RIEGER (T.)</s1></fA11><fA11 i1="03" i2="1"><s1>BLÖMERS (Ch)</s1></fA11><fA11 i1="04" i2="1"><s1>SCHÄPERS (Th)</s1></fA11><fA11 i1="05" i2="1"><s1>GRÜTZMACHER (D.)</s1></fA11><fA11 i1="06" i2="1"><s1>LEPSA (M. I.)</s1></fA11><fA14 i1="01"><s1>Peter Grünberg Institut (PGI-9), Forschungszentrum Jülich GmbH</s1><s2>52425 Jülich</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></fA14><fA14 i1="02"><s1>JARA-Fundamentals of Future Information Technology, Jülich-Aachen Research Alliance</s1><s3>DEU</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></fA14><fA14 i1="03"><s1>II. Physikalisches Institut, RWTH Aachen University</s1><s2>52056 Aachen</s2><s3>DEU</s3><sZ>4 aut.</sZ></fA14><fA20><s2>335601.1-335601.7</s2></fA20><fA21><s1>2013</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>22480</s2><s5>354000506597970100</s5></fA43><fA44><s0>0000</s0><s1>© 2013 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>19 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>13-0283845</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Nanotechnology : (Bristol. Print)</s0></fA64><fA66 i1="01"><s0>GBR</s0></fA66><fC01 i1="01" l="ENG"><s0>We report on the self-catalyzed growth of InAs nanowires by molecular beam epitaxy on GaAs substrates covered by a thin silicon oxide layer. Clear evidence is presented to demonstrate that, under our experimental conditions, the growth takes place by the vapor-liquid-solid (VLS) mechanism via an In droplet. The nanowire growth rate is controlled by the arsenic pressure while the diameter depends mainly on the In rate. The contact angle of the In droplet is smaller than that of the Ga droplet involved in the growth of GaAs nanowires, resulting in much lower growth rates. The crystal structure of the VLS grown InAs nanowires is zinc blende with regularly spaced rotational twins forming a twinning superlattice.</s0></fC01><fC02 i1="01" i2="3"><s0>001B80A16H</s0></fC02><fC02 i1="02" i2="3"><s0>001B60A46</s0></fC02><fC02 i1="03" i2="3"><s0>001B80A07V</s0></fC02><fC02 i1="04" i2="3"><s0>001B80A07B</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Catalyseur</s0><s5>01</s5></fC03><fC03 i1="01" i2="3" l="ENG"><s0>Catalysts</s0><s5>01</s5></fC03><fC03 i1="02" i2="X" l="FRE"><s0>Synthèse nanomatériau</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="ENG"><s0>Nanomaterial synthesis</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="SPA"><s0>Síntesis nanomaterial</s0><s5>02</s5></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Arséniure d'indium</s0><s2>NK</s2><s5>03</s5></fC03><fC03 i1="03" i2="3" l="ENG"><s0>Indium arsenides</s0><s2>NK</s2><s5>03</s5></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Semiconducteur III-V</s0><s5>04</s5></fC03><fC03 i1="04" i2="3" l="ENG"><s0>III-V semiconductors</s0><s5>04</s5></fC03><fC03 i1="05" i2="X" l="FRE"><s0>Composé III-V</s0><s5>05</s5></fC03><fC03 i1="05" i2="X" l="ENG"><s0>III-V compound</s0><s5>05</s5></fC03><fC03 i1="05" i2="X" l="SPA"><s0>Compuesto III-V</s0><s5>05</s5></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Maclage</s0><s5>06</s5></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Twinning</s0><s5>06</s5></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Superréseau</s0><s5>07</s5></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Superlattices</s0><s5>07</s5></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Epitaxie jet moléculaire</s0><s5>08</s5></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Molecular beam epitaxy</s0><s5>08</s5></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Oxyde de silicium</s0><s2>NK</s2><s5>09</s5></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Silicon oxides</s0><s2>NK</s2><s5>09</s5></fC03><fC03 i1="10" i2="X" l="FRE"><s0>Couche oxyde</s0><s5>10</s5></fC03><fC03 i1="10" i2="X" l="ENG"><s0>Oxide layer</s0><s5>10</s5></fC03><fC03 i1="10" i2="X" l="SPA"><s0>Capa óxido</s0><s5>10</s5></fC03><fC03 i1="11" i2="X" l="FRE"><s0>Condition opératoire</s0><s5>11</s5></fC03><fC03 i1="11" i2="X" l="ENG"><s0>Operating conditions</s0><s5>11</s5></fC03><fC03 i1="11" i2="X" l="SPA"><s0>Condición operatoria</s0><s5>11</s5></fC03><fC03 i1="12" i2="X" l="FRE"><s0>Méthode VLS</s0><s5>12</s5></fC03><fC03 i1="12" i2="X" l="ENG"><s0>VLS growth</s0><s5>12</s5></fC03><fC03 i1="12" i2="X" l="SPA"><s0>Método VLS</s0><s5>12</s5></fC03><fC03 i1="13" i2="3" l="FRE"><s0>Gouttelette</s0><s5>13</s5></fC03><fC03 i1="13" i2="3" l="ENG"><s0>Droplets</s0><s5>13</s5></fC03><fC03 i1="14" i2="3" l="FRE"><s0>Taux croissance</s0><s5>14</s5></fC03><fC03 i1="14" i2="3" l="ENG"><s0>Growth rate</s0><s5>14</s5></fC03><fC03 i1="15" i2="3" l="FRE"><s0>Arsenic</s0><s2>NC</s2><s5>29</s5></fC03><fC03 i1="15" i2="3" l="ENG"><s0>Arsenic</s0><s2>NC</s2><s5>29</s5></fC03><fC03 i1="16" i2="3" l="FRE"><s0>Angle contact</s0><s5>30</s5></fC03><fC03 i1="16" i2="3" l="ENG"><s0>Contact angle</s0><s5>30</s5></fC03><fC03 i1="17" i2="X" l="FRE"><s0>Mécanisme croissance</s0><s5>31</s5></fC03><fC03 i1="17" i2="X" l="ENG"><s0>Growth mechanism</s0><s5>31</s5></fC03><fC03 i1="17" i2="X" l="SPA"><s0>Mecanismo crecimiento</s0><s5>31</s5></fC03><fC03 i1="18" i2="3" l="FRE"><s0>Arséniure de gallium</s0><s2>NK</s2><s5>32</s5></fC03><fC03 i1="18" i2="3" l="ENG"><s0>Gallium arsenides</s0><s2>NK</s2><s5>32</s5></fC03><fC03 i1="19" i2="3" l="FRE"><s0>Nanofil</s0><s5>33</s5></fC03><fC03 i1="19" i2="3" l="ENG"><s0>Nanowires</s0><s5>33</s5></fC03><fC03 i1="20" i2="3" l="FRE"><s0>Nanomatériau</s0><s5>34</s5></fC03><fC03 i1="20" i2="3" l="ENG"><s0>Nanostructured materials</s0><s5>34</s5></fC03><fC03 i1="21" i2="3" l="FRE"><s0>Structure cristalline</s0><s5>35</s5></fC03><fC03 i1="21" i2="3" l="ENG"><s0>Crystal structure</s0><s5>35</s5></fC03><fC03 i1="22" i2="3" l="FRE"><s0>Zinc</s0><s2>NC</s2><s5>36</s5></fC03><fC03 i1="22" i2="3" l="ENG"><s0>Zinc</s0><s2>NC</s2><s5>36</s5></fC03><fC03 i1="23" i2="3" l="FRE"><s0>Défaut cristallin</s0><s5>37</s5></fC03><fC03 i1="23" i2="3" l="ENG"><s0>Crystal defects</s0><s5>37</s5></fC03><fC03 i1="24" i2="3" l="FRE"><s0>Substrat GaAs</s0><s4>INC</s4><s5>46</s5></fC03><fC03 i1="25" i2="3" l="FRE"><s0>8116H</s0><s4>INC</s4><s5>71</s5></fC03><fC03 i1="26" i2="3" l="FRE"><s0>8116</s0><s4>INC</s4><s5>72</s5></fC03><fC03 i1="27" i2="3" l="FRE"><s0>6146</s0><s4>INC</s4><s5>73</s5></fC03><fC03 i1="28" i2="3" l="FRE"><s0>8107V</s0><s4>INC</s4><s5>74</s5></fC03><fN21><s1>266</s1></fN21><fN44 i1="01"><s1>OTO</s1></fN44><fN82><s1>OTO</s1></fN82></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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